MML20211HT1【PDF 1/20 页】IC LNA 2GHZ 21P1DB 8DFN

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Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

Low Noise Amplifier

The MML20211H is a single--stage Low Noise Amplifier (LNA) with active bias

and high isolation for use in cellular infrastructure applications. It is designed for

a range of low noise, high linearity applications such as pico cell, femto cell,

tower mounted amplifiers (TMA) and receiver front end circuits. It operates from

a single voltage supply and is suitable for applications with frequencies from

1400 to 2800 MHz such as TD-- SCDMA, W-- CDMA, UMTS, PCS, LTE and

BWA.

Features

? Ultra Low Noise Figure: 0.65 dB @ 2140 MHz

? Frequency: 1400--2800 MHz

? High Reverse Isolation: --35 dB @ 2140 MHz

? P1dB: 21.3 dBm @ 2140 MHz

? Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)

? Third Order Output Intercept Point: 33 dBm @ 2140 MHz

? Active Bias Control (adjustable externally)

? Single 5 Volt Supply

? Supply Current: 60 mA

? 50 Ohm Operation (some external matching required)

? Low Cost DFN Surface Mount Package

? RoHS Compliant

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Document Number: MML20211H

Rev. 0, 8/2011

MML20211HT1

1400--2800 MHz, 18.6 dB

21.3 dBm

E--pHEMT

CASE 2132--01

DFN 2x2

PLASTIC

Table 1. Typical Performance (1)

Table 2. Maximum Ratings

1400

1800

2140

2700

Rating

Symbol

Value

Unit

Characteristic

Noise Figure (2)

Input Return

Loss (S11)

Symbol

IRL

MHz

0.65

--19.5

MHz

0.65

--16

MHz

0.65

--16.7

MHz

0.85

--17.3

Unit

Supply Voltage

Supply Current

RF Input Power

V DD

I DD

P in

200

dBm

Junction Temperature

T J

150

° C

Output Return

Loss (S22)

Small--Signal

Gain (S21)

Power Output

ORL

G p

P1dB

--24.9

21.3

21.1

--28

19.7

21.1

--26.6

18.6

21.3

--20

18.1

19.6

dBm

Storage Temperature Range T stg --65 to +150 ° C

(3)

3. For reliable operation, the junction temperature should not

exceed 150 ° C.

@ 1dB

Compression

Third Order

IIP3

10.8

12.5

14.4

14.9

dBm

Input Intercept

Point

Third Order

OIP3

32.1

32.2

dBm

Output

Intercept Point

1. V DD = 5 Vdc, T A = 25 ° C, 50 ohm system, application circuit tuned

for specified frequency.

2. Noise Figure value calculated with connector losses removed.

Table 3. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 87 ° C, 5 Vdc, I DD = 60 mA, no RF applied

Symbol

R θ JC

Value (4)

43.4

Unit

° C/W

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .

Select Documentation/Application Notes -- AN1955.

RF Device Data

Freescale Semiconductor

MML20211HT1

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